Specification	SQ2362ES-T1_GE3

Current - Continuous Drain (Id) (Tc)	4.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	550 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	3 W
Qualification	AEC-Q101
Rds On (Max)	95 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQ2362 Series

Part	Input Capacitance (Ciss) (Max)	Technology	Vgs (Max)	Mounting Type	Rds On (Max)	FET Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Qualification	Current - Continuous Drain (Id) (Tc)	Grade	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SQ2362ES-T1_BE3	550 pF	MOSFET (Metal Oxide)	20 V	Surface Mount	68 mOhm	N-Channel	2.5 V	-55 °C	175 °C	SOT-23-3 (TO-236)	AEC-Q101	4.3 A	Automotive	60 V	3 W	SC-59 SOT-23-3 TO-236-3	12 nC	10 V	4.5 V
Vishay Dale SQ2362ES-T1_GE3	550 pF	MOSFET (Metal Oxide)	20 V	Surface Mount	95 mOhm	N-Channel	2.5 V	-55 °C	175 °C	SOT-23-3 (TO-236)	AEC-Q101	4.3 A	Automotive	60 V	3 W	SC-59 SOT-23-3 TO-236-3	12 nC			10 V

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