SIDC105D120H8X1SA1

Unknown

Infineon Technologies

1200 V, 200 A, HIGH EFFICIENCY, EMITTER CONTROLLED DIODE

Search across all available documentation for this part.

Unknown

Infineon Technologies

1200 V, 200 A, HIGH EFFICIENCY, EMITTER CONTROLLED DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC105D120H8X1SA1

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.41 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Speed	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Technology
Infineon Technologies SIDC105D120H8X1SA1	1.2 kV	Surface Mount	Sawn on foil	Standard Recovery >500ns	200 mA	-40 °C	175 ░C	27 µA	1.41 V	200 A	Die	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Highly efficient fast switching emitter controlled diode for power modules and discrete devices.

Technical documentation and resources

No documents available