Specification	SIRA88BDP-T1-GE3

Current - Continuous Drain (Id) (Ta)	19 A
Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	680 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	3.8 W, 17 W
Rds On (Max)	6.83 mOhm, 6.83 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRA88 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Technology	Package / Case	FET Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)
Vishay Dale SIRA88BDP-T1-GE3	-16 V	20 V	19 A	40 A	MOSFET (Metal Oxide)	PowerPAK® SO-8	N-Channel	2.4 V	30 V	-55 °C	150 °C	3.8 W 17 W	6.83 mOhm 6.83 mOhm	PowerPAK® SO-8	19 nC	Surface Mount	10 V	4.5 V	680 pF

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