Specification	SI7317DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	2.8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	9.8 nC
Input Capacitance (Ciss) (Max)	365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

SI7317 Series

Part	Mounting Type	FET Type	Package / Case	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package Name	Vgs(th) (Max)	Technology	Power Dissipation (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)
Vishay Dale SI7317DN-T1-GE3	Surface Mount	P-Channel	PowerPAK® 1212-8	1.2 Ohm	6 V	10 V	-55 °C	150 °C	30 V	PowerPAK® 1212-8	4.5 V	MOSFET (Metal Oxide)	3.2 W 19.8 W	9.8 nC	365 pF	2.8 A	150 V

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