Specification	2SC4116-GR,LF

Current - Collector (Ic) (Max)	150 mA, 0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	SC-70, SOT-323
Package Name	SC-70
Power - Max	100 mW
Transistor Type	NPN
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

2SC4116 Series

Part	DC Current Gain (hFE) (Min)	Vce Saturation (Max)	Package / Case	Mounting Type	Package Name	Frequency - Transition	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max	Operating Temperature
Toshiba Semiconductor and Storage 2SC4116-Y,LXHF	120	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C
Toshiba Semiconductor and Storage 2SC4116-Y,LF	120	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C
Toshiba Semiconductor and Storage 2SC4116-GR,LF	70	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C
Toshiba Semiconductor and Storage 2SC4116-GR,LXHF	200	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C
Toshiba Semiconductor and Storage 2SC4116-BL,LXHF	350	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C
Toshiba Semiconductor and Storage 2SC4116-BL,LF	350	250 mV	SC-70 SOT-323	Surface Mount	SC-70	80 MHz	0.15 mA 150 mA	100 nA	NPN	50 V	100 mW	125 °C

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