UF3003-G

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Comchip Technology

DIODE GEN PURP 200V 3A DO27

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Comchip Technology

DIODE GEN PURP 200V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	UF3003-G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1200	$ 0.16

DIODE GEN PURP 200V 3A DO27

Part	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Comchip Technology UF3003-G	Standard	-55 °C	125 °C	1 V	5 µA	50 pF	50 ns	DO-27	200 mA, 500 ns	Axial, DO-201AA, DO-27	Through Hole	200 V	3 A

General part information

Diode 200 V 3A Through Hole DO-27

Technical documentation and resources

No documents available