DS28E02P-W10+9T
ActiveAnalog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
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DS28E02P-W10+9T
ActiveAnalog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | DS28E02P-W10+9T | DS28E02 Series |
|---|---|---|
| Access Time | 2 µs | 2 µs |
| Memory Format | EEPROM | EEPROM |
| Memory Interface | 1-Wire® | 1-Wire® |
| Memory Organization | 256 x 4 | 256 x 4 |
| Memory Size | 128 B | 128 B |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 85 C | 85 C |
| Operating Temperature [Min] | -20 °C | -20 °C |
| Package / Case | 6-SMD, J-Lead | 6-SMD, J-Lead |
| Supplier Device Package | 6-TSOC | 6-TSOC, 6-TDFN (3x3) |
| Technology | EEPROM | EEPROM |
| Voltage - Supply [Max] | 3.65 V | 3.65 V |
| Voltage - Supply [Min] | 1.75 V | 1.75 V |
| Write Cycle Time - Word, Page | 25 ms | 25 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
DS28E02 Series
IC EEPROM 1KBIT 1-WIRE 6TSOC
| Part | Memory Size | Write Cycle Time - Word, Page | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Memory Format | Memory Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Package / Case | Access Time | Technology | Supplier Device Package | Memory Interface |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS28E02P-W10+6T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+1 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+3T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® | |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+4 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+9T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W13+1T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+4T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® | |
Analog Devices Inc./Maxim Integrated DS28E02P+ | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+5 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+2T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® |
Description
General part information
DS28E02 Series
EEPROM Memory IC 1Kbit 1-Wire® 2 µs 6-TSOC
Documents
Technical documentation and resources
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