TK16J60W,S1VQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15.8A TO3P

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15.8A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK16J60W,S1VQ

Current - Continuous Drain (Id) @ 25°C	15.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK16J60W,S1VQ	Through Hole	15.8 A	38 nC	MOSFET (Metal Oxide)	150 °C	TO-3P(N)	130 W	10 V	190 mOhm	1350 pF	SC-65-3 TO-3P-3	30 V	N-Channel	600 V	3.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)

Technical documentation and resources