Specification	SIHJ7N65E-T1-GE3

Current - Continuous Drain (Id) (Tc)	7.9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	820 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	96 W
Rds On (Max)	598 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHJ7 Series

Part	Package Name	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Gate Charge (Max)	Package / Case
Vishay Dale SIHJ7N65E-T1-GE3	PowerPAK® SO-8	7.9 A	820 pF	598 mOhm	650 V	4 V	Surface Mount	96 W	-55 °C	150 °C	30 V	10 V	MOSFET (Metal Oxide)	N-Channel	44 nC 44 nC	PowerPAK® SO-8

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