Specification	SIC20120PTA-BP

Capacitance	750 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

SIC20120 Series

Part	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Capacitance	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Mounting Type
MCC (Micro Commercial Components) SIC20120PTP-BP	TO-247-2	0 ns	20 A	1.8 V	60 µA	1190 pF	1200 V	500 mA	No Recovery Time	500 mA 500 mA	TO-247-2L	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole
MCC (Micro Commercial Components) SIC20120PTA-BP	TO-247-3		10 A	1.8 V	2 µA	750 pF	1200 V	500 mA	No Recovery Time	500 mA 500 mA	TO-247-3	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole
MCC (Micro Commercial Components) SIC20120PTP-BP	TO-247-2	0 ns	20 A	1.8 V	60 µA	1190 pF	1200 V	500 mA	No Recovery Time	500 mA 500 mA	TO-247-2L	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole
MCC (Micro Commercial Components) SIC20120PTA-BP	TO-247-3	0 ns	10 A	1.8 V	2 µA	750 pF	1200 V	500 mA	No Recovery Time	500 mA 500 mA	TO-247-3	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole

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