Specification	SQS966ENW-T1_GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	8.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	572 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8W Dual
Package Name	PowerPAK® 1212-8W Dual
Power - Max (Tc)	27.8 W
Qualification	AEC-Q101
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQS966 Series

Part	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Grade	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Qualification	Power - Max (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Technology	Channel Count	Configuration	Configuration - Features
Vishay Dale SQS966ENW-T1_GE3	2.5 V	PowerPAK® 1212-8W Dual	8.8 nC	Automotive	6 A	Surface Mount Wettable Flank	PowerPAK® 1212-8W Dual	572 pF	60 V	AEC-Q101	27.8 W	-55 °C	175 °C	36 mOhm	MOSFET (Metal Oxide)	2	N-Channel	Dual

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