Specification	SQJQ144AE-T1_GE3

Current - Continuous Drain (Id) (Tc)	575 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	145 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	9020 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 8 x 8
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	600 W
Qualification	AEC-Q101
Rds On (Max)	0.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJQ144 Series

Part	Vgs (Max)	Power Dissipation (Max)	Qualification	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package Width	Package Name	Package Length	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Grade	Technology	FET Type	Current - Continuous Drain (Id) (Tc)
Vishay Dale SQJQ144AE-T1_GE3	20 V	600 W	AEC-Q101	40 V	10 V	PowerPAK® 8 x 8	8 mm	PowerPAK®	8 mm	145 nC	0.9 mOhm	3.5 V	9020 pF	-55 °C	175 °C	Surface Mount	Automotive	MOSFET (Metal Oxide)	N-Channel	575 A

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