UF4007 R1G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO204AL

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	UF4007 R1G

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Grade	Qualification
Taiwan Semiconductor Corporation UF4007 R1G	200 mA 500 ns	Standard	1000 V	17 pF	150 °C	-55 °C	75 ns	1 A	DO-204AL (DO-41)	Axial DO-204AL DO-41	1.7 V	5 µA	Through Hole
Taiwan Semiconductor Corporation UF4007H	200 mA 500 ns	Standard	1000 V	17 pF	150 °C	-55 °C	75 ns	1 A	DO-204AL (DO-41)	Axial DO-204AL DO-41	1.7 V	5 µA	Through Hole	Automotive	AEC-Q101
Taiwan Semiconductor Corporation UF4007 B0G	200 mA 500 ns	Standard	1000 V	17 pF	150 °C	-55 °C	75 ns	1 A	DO-204AL (DO-41)	Axial DO-204AL DO-41	1.7 V	5 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 1000 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources