APT94N65B2C3G

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Microsemi Corporation

MOSFET N-CH 650V 94A T-MAX

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Microsemi Corporation

MOSFET N-CH 650V 94A T-MAX

Technical Specifications

Parameters and characteristics for this part

Specification	APT94N65B2C3G

Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	580 nC
Input Capacitance (Ciss) (Max) @ Vds	13940 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	833 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	T-MAX™ [B2]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Microsemi Corporation APT94N65B2C3G	MOSFET (Metal Oxide)	580 nC	-55 °C	150 °C	3.9 V	TO-247-3 Variant	35 mOhm	833 W	T-MAX™ [B2]	13940 pF	650 V	20 V	N-Channel	Through Hole	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 94A (Tc) 833W (Tc) Through Hole T-MAX™ [B2]

Technical documentation and resources

No documents available