Specification	SI4539ADY-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.7 A
Current - Continuous Drain (Id) (Typical)	4.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	1.1 W
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SI4539 Series

Part	Drain to Source Voltage (Vdss)	Package Length	Package Name	Package Width	Vgs(th) (Max)	Power - Max	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Configuration	Gate Charge (Max)
Vishay Dale SI4539ADY-T1-E3	30 V	0.154 in	8-SOIC	3.9 mm	1 V	1.1 W	Logic Level Gate	-55 °C	150 °C	36 mOhm	Surface Mount	MOSFET (Metal Oxide)	4.4 A	3.7 A	N P-Channel	20 nC
Vishay Dale SI4539ADY-T1-GE3	30 V	0.154 in	8-SOIC	3.9 mm	1 V	1.1 W	Logic Level Gate	-55 °C	150 °C	36 mOhm	Surface Mount	MOSFET (Metal Oxide)	4.4 A	3.7 A	N P-Channel	20 nC

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