Description
General part information
IPT019 Series
Infineon’sOptiMOS™ 5 80Vn-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such asforklift,light electric vehicles (LEV), POL (point-of-load) andtelecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT019N08N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 32 A |
| Current - Continuous Drain (Id) (Tc) | 247 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 127 nC |
| Input Capacitance (Ciss) (Max) | 9200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-1 |
| Power Dissipation (Max) | 231 W |
| Rds On (Max) | 1.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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