Specification	SI5461EDC-T1-E3

Current - Continuous Drain (Id) (Ta)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	1.3 W
Rds On (Max)	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	450 mV

SI5461 Series

Part	Package Name	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Package / Case	Technology	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs (Max)	Mounting Type	Vgs(th) (Max)
Vishay Dale SI5461EDC-T1-GE3	1206-8 ChipFET™	20 V	1.3 W	-55 °C	150 °C	P-Channel	4.5 A	8-SMD Flat Leads	MOSFET (Metal Oxide)	45 mOhm	4.5 V	1.8 V	20 nC	12 V	Surface Mount	450 mV
Vishay Dale SI5461EDC-T1-E3	1206-8 ChipFET™	20 V	1.3 W	-55 °C	150 °C	P-Channel	4.5 A	8-SMD Flat Leads	MOSFET (Metal Oxide)	45 mOhm	4.5 V	1.8 V	20 nC	12 V	Surface Mount	450 mV

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