BUK9Y19-75B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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BUK9Y19-75B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y19-75B Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y19-75B,115

Current - Continuous Drain (Id) (Tc)	48.2 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3096 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	106 W
Qualification	AEC-Q101
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2.15 V

BUK9Y19-75B Series

N-channel TrenchMOS logic level FET

Part	Grade	FET Type	Rds On (Max)	Vgs (Max)	Package / Case	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Qualification	Technology	Package Name	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. BUK9Y19-75B,115	Automotive	N-Channel	18 mOhm	15 V	SC-100 SOT-669	30 nC	2.15 V	106 W	3096 pF	Surface Mount	75 V	AEC-Q101	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	48.2 A	10 V	5 V	-55 °C	175 °C