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STB130N6F7 - STMICROELECTRONICS STB11N65M5

STB130N6F7

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STMicroelectronics

N-CHANNEL 60 V, 4.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

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STB130N6F7 - STMICROELECTRONICS STB11N65M5

STB130N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 4.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB130N6F7
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds2600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs5 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.74
10$ 1.77
100$ 1.22
500$ 0.98
Digi-Reel® 1$ 2.74
10$ 1.77
100$ 1.22
500$ 0.98
Tape & Reel (TR) 1000$ 0.90
2000$ 0.84
3000$ 0.81
5000$ 0.80
NewarkEach (Supplied on Cut Tape) 1$ 2.49
10$ 2.05
25$ 1.87
50$ 1.70
100$ 1.52
250$ 1.42
500$ 1.32
1000$ 1.23

Description

General part information

STB130N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources