Specification	SI5475DC-T1-E3

Current - Continuous Drain (Id) (Ta)	5.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	29 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	1.3 W
Rds On (Max)	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	450 mV

SI5475 Series

Part	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Vgs (Max)	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package Name	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI5475DC-T1-GE3	5.5 A	4.5 V	1.8 V	450 mV	8 V	8-SMD Flat Leads	MOSFET (Metal Oxide)	-55 °C	150 °C	1.3 W	1206-8 ChipFET™	P-Channel	31 mOhm	12 V	29 nC	Surface Mount
Vishay Dale SI5475DC-T1-E3	5.5 A	4.5 V	1.8 V	450 mV	8 V	8-SMD Flat Leads	MOSFET (Metal Oxide)	-55 °C	150 °C	1.3 W	1206-8 ChipFET™	P-Channel	31 mOhm	12 V	29 nC	Surface Mount
Vishay Dale SI5475BDC-T1-E3	6 A	4.5 V	1.8 V	1 V	8 V	8-SMD Flat Leads	MOSFET (Metal Oxide)	-55 °C	150 °C	2.5 W 6.3 W	1206-8 ChipFET™	P-Channel	28 mOhm	12 V	40 nC	Surface Mount	1400 pF
Vishay Dale SI5475DDC-T1-GE3		4.5 V	1.8 V	1 V	8 V	8-SMD Flat Leads	MOSFET (Metal Oxide)	-55 °C	150 °C	2.3 W 5.7 W	1206-8 ChipFET™	P-Channel	32 mOhm	12 V	50 nC	Surface Mount	1600 pF	6 A

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