SPP77N06S2-12

Obsolete

Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP77N06S2-12

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	158 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies SPP77N06S2-12	20 V	4 V	12 mOhm	2350 pF	55 V	TO-220-3	N-Channel	158 W	60 nC	MOSFET (Metal Oxide)	10 V	Through Hole	PG-TO220-3-1	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 80A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources