Specification	2N3904

Current - Collector (Ic) (Max)	0.2 mA
Current - Collector Cutoff (Max)	50 nA
DC Current Gain (hFE) (Min)	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3, TO-92-3 (TO-226AA)
Package Name	TO-92
Power - Max	625 mW
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

2N/2/3/4/5 Series

Part	Package Name	Package / Case	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - Forward (Vf) (Max)	Technology	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction (Min)	Operating Temperature - Junction (Max)	Voltage - DC Reverse (Vr) (Max)	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Transistor Type	Operating Temperature (Min)	Operating Temperature (Max)	Frequency - Transition	Vce Saturation (Max)	Power - Max	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)
Diotec Semiconductor 20SQ045-3G	P-600 P600	Axial P600	200 µA	500 ns	200 mA	550 mV	Schottky	20 A	Through Hole	-50 °C	150 °C	45 V
Diotec Semiconductor 2N3904	TO-92	TO-226-3 TO-92-3 (TO-226AA) TO-92-3 (TO-226AA) Formed Leads							Through Hole				100	50 nA	NPN	-55 °C	150 °C	300 MHz	300 mV	625 mW	0.2 mA	40 V
Diotec Semiconductor 2N5551	TO-92	TO-226-3 TO-92-3 (TO-226AA)							Through Hole				80	50 nA	NPN	-55 °C	150 °C	300 MHz	200 mV	625 mW	0.6 mA	160 V
Diotec Semiconductor 2N5401	TO-92	TO-226-3 TO-92-3 (TO-226AA)							Through Hole				60	100 nA	PNP	-55 °C	150 °C	400 MHz	500 mV	625 mW	0.6 mA	150 V

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