IXYH30N170C

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IXYS

TRANSISTOR: IGBT; XPT™; 1.7KV; 30A; 937W; TO247-3

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Active

IXYS

TRANSISTOR: IGBT; XPT™; 1.7KV; 30A; 937W; TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXYH30N170C

Current - Collector Pulsed (Icm)	255 A
Gate Charge	140 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	937 W
Supplier Device Package	TO-247 (IXTH)
Switching Energy	5.9 mJ, 3.3 mJ
Td (on/off) @ 25°C	150 ns
Td (on/off) @ 25°C	28 ns
Test Condition [custom]	30 A
Test Condition [custom]	850 V, 15 V
Test Condition [custom]	10 Ohm
Vce(on) (Max) @ Vge, Ic	3.7 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Mounting Type	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Gate Charge	Package / Case	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Test Condition	IGBT Type	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]
IXYS IXYH30N170C	937 W	3.7 V	255 A	Through Hole	30 A	15 V 850 V	10 Ohm	140 nC	TO-247-3	3.3 mJ 5.9 mJ	-55 °C	175 ░C	150 ns	28 ns	1700 V	TO-247 (IXTH)
IXYS IXYH30N450HV	430 W	3.9 V	200 A	Through Hole				88 nC	TO-247-3 Variant		-55 °C	150 °C			4500 V	TO-247HV	60 A	10 Ohm 15 V 30 A 960 V	PT
IXYS IXYH30N120C3D1	416 W	3.3 V	133 A	Through Hole				69 nC	TO-247-3	1.1 mJ 2.6 mJ	-55 °C	150 °C				TO-247 (IXTH)	66 A	10 Ohm 15 V 30 A 600 V		195 ns	19 ns 130 ns	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1700 V 108 A 937 W Through Hole TO-247 (IXTH)

Technical documentation and resources

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