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IGC50T120T8RQX1SA1

IGC50T120T8RQX1SA1

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INFINEON

TRANS IGBT CHIP N-CH 1200V 3-PIN DIE WAFER

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IGC50T120T8RQX1SA1

IGC50T120T8RQX1SA1

Active
INFINEON

TRANS IGBT CHIP N-CH 1200V 3-PIN DIE WAFER

Find alt

Description

General part information

IGC50T120 Series

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

Technical Specifications

Parameters and characteristics for this part

SpecificationIGC50T120T8RQX1SA1
Current - Collector Pulsed (Icm)150 A
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeSurface Mount
Package / CaseDie
Package NameDie
Vce(on) (Max)2.42 V
Voltage - Collector Emitter Breakdown (Max)1200 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources