Specification	SI7149DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	147 nC
Input Capacitance (Ciss) (Max)	4590 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	69 W
Rds On (Max)	5.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

SI7149 Series

Part	Vgs (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale SI7149DP-T1-GE3	25 V	Surface Mount	5.2 mOhm	2.5 V	PowerPAK® SO-8	P-Channel	MOSFET (Metal Oxide)	69 W	10 V	4.5 V	30 V	PowerPAK® SO-8	147 nC	-55 °C	150 °C	50 A	4590 pF

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