
TPN5R203PL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0052 Ω@10V, TSON ADVANCE, U-MOSⅨ-H

TPN5R203PL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0052 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
Description
General part information
TPN5R203PL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0052 Ω@10V, TSON Advance, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN5R203PL,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 38 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 22 nC |
| Input Capacitance (Ciss) (Max) | 1975 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 610 mW, 61 W |
| Rds On (Max) | 5.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Power MOSFET Electrical Characteristics
Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
MOSFET Avalanche Ruggedness
MOSFET Gate Driver Circuit
Power MOSFET Structure and Characteristics
Selection Guide 2024 - MOSFETs
MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
Impacts of the dv/dt Rate on MOSFETs
Power MOSFET Thermal Design and Attachment of a Thermal Fin
Parasitic Oscillation and Ringing of Power MOSFETs
Power MOSFET Maximum Ratings
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Motor Control (Vacuum Cleaners)
TPN5R203PL Data sheet/Japanese
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Self-Turn-On Phenomenon
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET SPICE model grade
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Reverse Recovery Operation and Destruction of MOSFET Body Diode
RC Snubbers for Step-Down Converters
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET Secondary Breakdown
TPN5R203PL Data sheet/English
Calculating the Temperature of Discrete Semiconductor Devices
Hints and Tips for Thermal Design part3
Derating of the MOSFET Safe Operating Area
Avalanche energy calculation
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Simplified CFD Model Application Note
Resonant Circuits and Soft Switching
Hints and Tips for Thermal Design for Discrete Semiconductor Devices