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Description

General part information

EMD22 Series

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-563

Technical Specifications

Parameters and characteristics for this part

SpecificationEMD22-TP
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)80
Frequency - Transition250 MHz
Mounting TypeSurface Mount
NPN Count1
Package / CaseSOT-563, SOT-666
Package NameSOT-563
PNP Count1
Power - Max150 mW
Resistor - Base (R1) Resistance Options4.7kOhms, 47kOhms
Transistor ConfigurationPre-Biased
Transistor TypePNP, NPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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