Specification	SIA430DJ-T4-GE3

Current - Continuous Drain (Id) (Ta)	12 A
Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19.2 W
Rds On (Max)	13.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SIA430 Series

Part	Rds On (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Package / Case	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SIA430DJ-T4-GE3	13.5 mOhm	MOSFET (Metal Oxide)	12 A	12 A	PowerPAK® SC-70-6	10 V	4.5 V	Surface Mount	PowerPAK® SC-70-6	18 nC	N-Channel	20 V	3.5 W 19.2 W	20 V	-55 °C	150 °C	3 V	800 pF
Vishay Dale SIA430DJT-T4-GE3	13.5 mOhm	MOSFET (Metal Oxide)	12 A	12 A	PowerPAK® SC-70-6	10 V	4.5 V	Surface Mount	PowerPAK® SC-70-6	18 nC	N-Channel	20 V	3.5 W 19.2 W	20 V	-55 °C	150 °C	3 V	800 pF
Vishay Dale SIA430DJT-T1-GE3	13.5 mOhm	MOSFET (Metal Oxide)		12 A	PowerPAK® SC-70-6 Single	10 V	4.5 V	Surface Mount	PowerPAK® SC-70-6	18 nC	N-Channel	20 V	19.2 W	20 V	-55 °C	150 °C	3 V	800 pF

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