PMDPB30XN,115

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Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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PMDPB30XN,115

Active

Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMDPB30XN Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB30XN,115

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	21.7 nC
Input Capacitance (Ciss) (Max)	660 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFDFN Exposed Pad
Package Length	2 mm
Package Name	6-HUSON
Package Width	2 mm
Power - Max	490 mW
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	900 mV

PMDPB30XN Series

20 V, dual N-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max)	Package / Case	Rds On (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Power - Max	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Current - Continuous Drain (Id)	Mounting Type	Package Length	Package Name	Package Width
Nexperia USA Inc. PMDPB30XN,115	20 V	MOSFET (Metal Oxide)	900 mV	6-UFDFN Exposed Pad	40 mOhm	21.7 nC	2	N-Channel	Dual	490 mW	660 pF	-55 °C	150 °C	Logic Level Gate	4 A	Surface Mount	2 mm	6-HUSON	2 mm