IXFK35N50

Obsolete

IXYS

MOSFET N-CH 500V 35A TO264AA

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Obsolete

IXYS

MOSFET N-CH 500V 35A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK35N50

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	227 nC
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	416 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Package / Case	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFK35N50	TO-264-3 TO-264AA	N-Channel	TO-264AA (IXFK)	500 V	MOSFET (Metal Oxide)	20 V	35 A	-55 °C	150 °C	Through Hole	4 V	227 nC	5700 pF	150 mOhm	416 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 35A (Tc) 416W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available