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PDTB113ET,215

PDTB113ET,215

Active
Nexperia USA Inc.

PNP 500 MA, 50 V RESISTOR-EQUIPPED TRANSISTOR; R1 = 1 KOHM, R2 = 1 KOHM

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PDTB113ET,215

PDTB113ET,215

Active
Nexperia USA Inc.

PNP 500 MA, 50 V RESISTOR-EQUIPPED TRANSISTOR; R1 = 1 KOHM, R2 = 1 KOHM

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Description

General part information

PDTB113 Series

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTB113ET,215
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)33
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max250 mW
Resistor - Base (R1) Resistance1 kOhm
Resistor - Emitter Base (R2)1 kOhm
Transistor TypePre-Biased, PNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

3D models and CAD resources for this part