Description
General part information
CY62167 Series
CY62167ELL-45ZXI is a high-performance CMOS static RAM organized as 1M words by 16 bits/2M words by 8 bits. This device features an advanced circuit design to provide an ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. This device also has an automatic power down feature that reduces power consumption when addresses are not toggling. To write to the device, take chip enables (active-low CE1 LOW and CE2 HIGH) and write enable (active-low WE) input LOW. If byte low enable (active-low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (active-low BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62167ELL-45ZXI |
|---|---|
| Access Time | 45 ns |
| Memory Depth (Option 1) | 2 M |
| Memory Depth (Option 2) | 1 M |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Organization | 1M x 16, 2M x 8 |
| Memory Size | 16 Mb |
| Memory Type | Volatile |
| Memory Width (Option 1) | 8 bit |
| Memory Width (Option 2) | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.724 " |
| Package Name | 48-TSOP I, 48-TFSOP |
| Package Width | 18.4 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 5.5 V |
| Voltage - Supply (Minimum) | 4.5 V |
| Write Cycle Time - Page | 45 ns |
| Write Cycle Time - Word | 45 ns |
Pricing
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