Specification	SSM3J353F,LF

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	3.4 nC
Input Capacitance (Ciss) (Max)	159 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power Dissipation (Max)	600 mW
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-25 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SSM3J353F Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)

Part	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Current - Continuous Drain (Id) (Ta)	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Gate Charge (Max)
Toshiba Semiconductor and Storage SSM3J353F,LF	150 mOhm	600 mW	Surface Mount	-25 V	20 V	2.2 V	4 V	10 V	S-Mini	2 A	P-Channel	159 pF	SC-59 SOT-23-3 TO-236-3	30 V	MOSFET (Metal Oxide)	150 °C	3.4 nC

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