Specification	IMBG65R260M1HXTMA1

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	6 nC
Input Capacitance (Ciss) (Max)	201 pF, 201 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK, PG-TO263-7-12
Power Dissipation (Max)	65 W
Rds On (Max)	346 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.7 V

IMBG65R Series

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Power Dissipation (Max)	Technology	Package Leads	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)
INFINEON IMBG65R260M1HXTMA1	Surface Mount	-55 °C	175 °C	-5 V	23 V	201 pF 201 pF	650 V	5.7 V	346 mOhm	18 V	6 nC	65 W	SiCFET (Silicon Carbide)	7 Leads	D2PAK PG-TO263-7-12	N-Channel	6 A

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