Specification	SIDR5802EP-T1-RE3

Current - Continuous Drain (Id) (Ta)	34.2 A
Current - Continuous Drain (Id) (Tc)	153 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	3020 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8DC
Power Dissipation (Max)	150 W, 7.5 W
Rds On (Max)	2.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIDR Series

Part	Package Name	Rds On (Max)	Technology	Gate Charge (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive
Vishay Dale SIDR5802EP-T1-RE3	PowerPAK® SO-8DC	2.9 mOhm	MOSFET (Metal Oxide)	60 nC	4 V	10 V	7.5 V	3020 pF	34.2 A	153 A	80 V	N-Channel	20 V	PowerPAK® SO-8	7.5 W 150 W	-55 °C	175 °C	Surface Mount
Vishay Dale SIDR220DP-T1-GE3	PowerPAK® SO-8DC	5.8 mOhm	MOSFET (Metal Oxide)	200 nC	2.1 V	10 V	4.5 V	1085 pF	87.7 A	100 A	25 V	N-Channel		PowerPAK® SO-8	6.25 W 125 W	-55 °C	150 °C	Surface Mount	-12 V	16 V
Vishay Dale SIDR680ADP-T1-RE3	PowerPAK® SO-8DC	2.88 mOhm	MOSFET (Metal Oxide)	83 nC	3.5 V	10 V	7.5 V	4415 pF	30.7 A	137 A	80 V	N-Channel	20 V	PowerPAK® SO-8	6.25 W 125 W	-55 °C	150 °C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources