IRF3007PBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 12.6 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 12.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF3007PBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	12.6 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Infineon Technologies IRF3007STRLPBF	N-Channel	10 V	MOSFET (Metal Oxide)	12.6 mOhm	-55 °C	175 ░C	75 V	3270 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	130 nC	D2PAK	120 W	62 A	4 V
Infineon Technologies IRF3007SPBF	N-Channel	10 V	MOSFET (Metal Oxide)	12.6 mOhm	-55 °C	175 ░C	75 V	3270 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	130 nC	D2PAK	120 W	62 A	4 V
Infineon Technologies IRF3007PBF	N-Channel	10 V	MOSFET (Metal Oxide)	12.6 mOhm	-55 °C	175 ░C	75 V	3270 pF	20 V	TO-220-3	Through Hole	130 nC	TO-220AB	200 W	75 A	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$