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IPD050N03LGATMA1

IPD050N03LGATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 50 A, 0.0042 OHM, TO-252 (DPAK), SURFACE MOUNT

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IPD050N03LGATMA1

IPD050N03LGATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 50 A, 0.0042 OHM, TO-252 (DPAK), SURFACE MOUNT

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Description

General part information

IPD050 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD050N03LGATMA1
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31 nC
Input Capacitance (Ciss) (Max)3200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)155 °C, 175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-11
Power Dissipation (Max)68 W
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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CAD

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