PSMN5R6-60YLX

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Nexperia USA Inc.

N-CHANNEL 60 V, 5.6 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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PSMN5R6-60YLX

Active

Nexperia USA Inc.

N-CHANNEL 60 V, 5.6 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN5R6-60YL Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN5R6-60YLX

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	66.8 nC
Input Capacitance (Ciss) (Max)	5026 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	167 W
Rds On (Max)	5.6 mOhm, 5.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

PSMN5R6-60YL Series

N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56

Part	Package Name	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Rds On (Max)	Package / Case	FET Type
Nexperia USA Inc. PSMN5R6-60YLX	LFPAK56 Power-SO8	2.1 V	10 V	5 V	MOSFET (Metal Oxide)	-55 °C	175 °C	Surface Mount	167 W	60 V	5026 pF	66.8 nC	100 A	20 V	5.6 mOhm 5.6 mOhm	SC-100 SOT-669	N-Channel