Specification	SI2303CDS-T1-BE3

Current - Continuous Drain (Id) (Ta)	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	8 nC
Input Capacitance (Ciss) (Max)	155 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	1 W, 2.3 W
Rds On (Max)	190 mOhm, 190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI2303 Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Gate Charge (Max)	Power Dissipation (Max)	Technology	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	FET Type
Vishay Dale SI2303CDS-T1-BE3	20 V	155 pF	SC-59 SOT-23-3 TO-236-3	8 nC	1 W 2.3 W	MOSFET (Metal Oxide)	Surface Mount	190 mOhm 190 mOhm	-55 °C	150 °C	3 V	30 V	1.9 A	10 V	4.5 V	SOT-23-3 (TO-236)	P-Channel
Vishay Dale SI2303BDS-T1	20 V	180 pF	SC-59 SOT-23-3 TO-236-3	10 nC	700 mW	MOSFET (Metal Oxide)	Surface Mount	200 mOhm	-55 °C	150 °C	3 V	30 V	1.49 A	10 V	4.5 V	SOT-23-3 (TO-236)	P-Channel
Vishay Dale SI2303BDS-T1-E3	20 V	180 pF	SC-59 SOT-23-3 TO-236-3	10 nC	700 mW	MOSFET (Metal Oxide)	Surface Mount	200 mOhm	-55 °C	150 °C	3 V	30 V	1.49 A	10 V	4.5 V	SOT-23-3 (TO-236)	P-Channel

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