CP388X-BC108-CT

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Central Semiconductor Corp

TRANS NPN 25V 0.2A DIE

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Central Semiconductor Corp

TRANS NPN 25V 0.2A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CP388X-BC108-CT

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Power - Max [Max]	600 mW
Supplier Device Package	Die
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp CP388X-BC108-CT	Die	200 mA	Surface Mount	Die	600 mV	25 V	15 nA	600 mW	150 °C	-65 °C	200
Central Semiconductor Corp CP388X-BC546B-WR	Die	100 mA	Surface Mount	Die	600 mV	65 V	15 nA	500 mW	150 °C	-65 °C	200
Central Semiconductor Corp CP388X-BC546B-CT	Die	100 mA	Surface Mount	Die	600 mV	65 V	15 nA	500 mW	150 °C	-65 °C	200

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor 25 V 200 mA 600 mW Surface Mount Die

Technical documentation and resources