Specification	SIA483ADJ-T1-GE3

Current - Continuous Drain (Id) (Ta)	10.6 A
Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	26 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.4 W, 17.9 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.5 V

SIA483 Series

Part	Rds On (Max)	FET Type	Vgs(th) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Vgs (Max)
Vishay Dale SIA483ADJ-T1-GE3	20 mOhm	P-Channel	2.5 V	-20 V	16 V	3.4 W 17.9 W	10.6 A	12 A	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	26 nC	PowerPAK® SC-70-6	950 pF	PowerPAK® SC-70-6	10 V	4.5 V	Surface Mount
Vishay Dale SIA483DJ-T1-GE3	21 mOhm	P-Channel	2.2 V			3.5 W 19 W		12 A	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	45 nC	PowerPAK® SC-70-6	1550 pF	PowerPAK® SC-70-6	10 V	4.5 V	Surface Mount	20 V

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