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BGA7H1BN6E6327XTSA1 - TSNP-6-2

BGA7H1BN6E6327XTSA1

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Infineon Technologies

RF AMPLIFIERS, -40 TO 85DEG C, TSNP-6 ROHS COMPLIANT: YES

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DocumentsDatasheet
BGA7H1BN6E6327XTSA1 - TSNP-6-2

BGA7H1BN6E6327XTSA1

Active
Infineon Technologies

RF AMPLIFIERS, -40 TO 85DEG C, TSNP-6 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBGA7H1BN6E6327XTSA1
Current - Supply4.3 mA
Frequency [Max]2.69 GHz
Frequency [Min]1.805 GHz
Gain11 dB
Mounting TypeSurface Mount
Noise Figure2.7 dB
Package / Case6-XFDFN
RF TypeLTE
Supplier Device PackagePG-TSNP-6-2
Test Frequency2.69 GHz
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.64
25$ 0.60
100$ 0.49
250$ 0.45
500$ 0.39
1000$ 0.31
2500$ 0.28
5000$ 0.26
Digi-Reel® 1$ 0.72
10$ 0.64
25$ 0.60
100$ 0.49
250$ 0.45
500$ 0.39
1000$ 0.31
2500$ 0.28
5000$ 0.26
Tape & Reel (TR) 15000$ 0.25
30000$ 0.24
NewarkEach (Supplied on Cut Tape) 1$ 0.63
10$ 0.45
25$ 0.40
50$ 0.38
100$ 0.35
250$ 0.33
500$ 0.31
1000$ 0.30

Description

General part information

BGA7H1 Series

BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc

Documents

Technical documentation and resources