CUS03(TE85L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 700MA US-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 700MA US-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CUS03(TE85L,Q,M)

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	700 mA
Current - Reverse Leakage @ Vr	100 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-323, SC-76
Speed	200 mA, 500 ns
Supplier Device Package	US-FLAT (1.25x2.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Package / Case
Toshiba Semiconductor and Storage CUS03(TE85L,Q,M)	150 °C	-40 °C	200 mA 500 ns	100 çA	700 mA	40 V	Schottky	US-FLAT (1.25x2.5)	45 pF	Surface Mount	SC-76 SOD-323

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 700mA Surface Mount US-FLAT (1.25x2.5)

Technical documentation and resources

No documents available