Specification	SI7634BDP-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	3150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 48 W
Rds On (Max)	5.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.6 V

SI7634 Series

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Package / Case	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Power Dissipation (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale SI7634BDP-T1-E3	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	68 nC	2.6 V	PowerPAK® SO-8	PowerPAK® SO-8	N-Channel	10 V	4.5 V	20 V	5 W 48 W	5.4 mOhm	40 A	3150 pF
Vishay Dale SI7634BDP-T1-GE3	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	68 nC	2.6 V	PowerPAK® SO-8	PowerPAK® SO-8	N-Channel	10 V	4.5 V	20 V	5 W 48 W	5.4 mOhm	40 A	3150 pF

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