Description
General part information
IPN70R2 Series
CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPN70R2K1CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7.8 nC |
| Input Capacitance (Ciss) (Max) | 163 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-3 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) | 2.1 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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