TK28V65W,LQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.12 Ω@10V, DFN 8 X 8, DTMOSⅣ
TK28V65W,LQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.12 Ω@10V, DFN 8 X 8, DTMOSⅣ
Description
General part information
TK28V65W Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.12 Ω@10V, DFN 8 x 8, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK28V65W,LQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 27.6 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 75 nC |
| Input Capacitance (Ciss) (Max) | 3000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 4-DFN-EP |
| Package Width | 8 mm |
| Power Dissipation (Max) | 240 W |
| Rds On (Max) | 120 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Derating of the MOSFET Safe Operating Area
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Electrical Characteristics: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
TK28V65W Data sheet/English
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Simplified CFD Model Application Note
TK28V65W Data sheet/Japanese
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes