Specification	SQ2315ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	870 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SQ2315 Series

Part	Power Dissipation (Max)	Vgs(th) (Max)	FET Type	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Grade	Technology	Package Name	Package / Case	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)
Vishay Dale SQ2315ES-T1_BE3	2 W	1 V	P-Channel	Surface Mount	4.5 V	1.8 V	12 V	13 nC	870 pF	Automotive	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	AEC-Q101	-55 °C	175 °C	50 mOhm	5 A	8 V
Vishay Dale SQ2315ES-T1_GE3	2 W	1 V	P-Channel	Surface Mount	4.5 V	1.8 V	12 V	13 nC	870 pF	Automotive	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	AEC-Q101	-55 °C	150 °C	50 mOhm	5 A	8 V

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