Specification	XPJR6604PB,LXHQ

Current - Continuous Drain (Id) (Ta)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	128 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	11380 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	5-PowerSFN
Package Name	S-TOGL™
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max)	0.66 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

XPJR6604PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 200 A, 0.00066 Ω@10V, S-TOGL

Part	Package Name	Package / Case	Power Dissipation (Max)	Vgs(th) (Max)	Technology	Grade	Mounting Type	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Qualification	Gate Charge (Max)	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max)
Toshiba Semiconductor and Storage XPJR6604PB,LXHQ	S-TOGL™	5-PowerSFN	375 W	3 V	MOSFET (Metal Oxide)	Automotive	Surface Mount	200 A	0.66 mOhm	AEC-Q101	128 nC	20 V	N-Channel	40 V	6 V	10 V	175 °C	11380 pF

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