2N6764T1

Active

Microsemi Corporation

MOSFET N-CH 100V 38A TO3

Search across all available documentation for this part.

Active

Microsemi Corporation

MOSFET N-CH 100V 38A TO3

Technical Specifications

Parameters and characteristics for this part

Specification	2N6764T1

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	4 W, 150 W
Rds On (Max) @ Id, Vgs	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Mounting Type
Microsemi Corporation 2N6764T1	65 mOhm	125 nC	N-Channel	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	150 °C	10 V	38 A	4 W 150 W	20 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 38A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3

Technical documentation and resources

No documents available