Specification	CTLDM303N-M832DS BK

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	3.6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	590 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-TDFN Exposed Pad
Package Name	TLM832DS
Power - Max	1.65 W
Rds On (Max)	40 mOhm, 40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.25 V

CTLDM303N Series

Part	Mounting Type	Current - Continuous Drain (Id)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Vgs(th) (Max)	Rds On (Max)	Technology	Power - Max	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Central Semiconductor Corp CTLDM303N-M832DS TR	Surface Mount	3.6 A	8-TDFN Exposed Pad	-55 °C	150 °C	590 pF	13 nC	2	N-Channel	Dual	1.2 V	40 mOhm 40 mOhm	MOSFET (Metal Oxide)	1.65 W	TLM832DS	30 V
Central Semiconductor Corp CTLDM303N-M832DS BK	Surface Mount		8-TDFN Exposed Pad	-55 °C	150 °C	590 pF	13 nC	2	N-Channel	Dual	1.25 V	40 mOhm 40 mOhm	MOSFET (Metal Oxide)	1.65 W	TLM832DS	30 V	3.6 A

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